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savantic semiconductor product specification silicon npn power transistors BD939F description with t o-220f package low collector saturation voltage applications for power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a p c collector dissipation t c =25 14 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BD939F characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 100 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 0.7 v v besat base-emitter saturation voltage i c =1a; i b =0.2a 1.5 v i cbo collector cut-off current v cb =120v; i e =0 50 a i ebo emitter cut-off current v eb =7v; i c =0 50 a h fe-1 dc current gain i c =0.2a ; v ce =4v 40 250 h fe-2 dc current gain i c =1a ; v ce =4v 15 f t transition frequency i c =0.25a ; v ce =10v 3 mhz
savantic semiconductor product specification 3 silicon npn power transistors BD939F package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)

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